Single Electron Transistor Thesis

Single Electron Transistor Thesis-70
We also extend our calculation by introduce some additional parameters such as; the effect of working temperature, gate voltage dependent, and the influence of resistance to the device characteristic.

We also extend our calculation by introduce some additional parameters such as; the effect of working temperature, gate voltage dependent, and the influence of resistance to the device characteristic.

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With the prospect of present, transistor-based microelectronics facing serious limitations due to quantum effects and heat dissipation, alternative computing paradigms---such as quantum computers, quantum-dot cellular automata and single-electronics---have emerged, promising an extension of high-level integration and computing power beyond the above limitations.

The most promising proposals are based on solid-state systems, and readout of a computational result often requires ultra-sensitive charge detectors capable of sensing the motion of single charges on fast timescales.

SETS have been shown to combine all these qualities.

However, random fluctuations of the background charge in solid-state systems can affect SETs and cause errors during readout.

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High performance devices are obtained through the use of low work function metal (zinc) contact and a rapid thermal annealing step.

Coulomb blockade is observed at low temperatures and is attributed to single-electron tunneling two tunnel junction barriers.

The nature of Coulomb blockade is also investigated by temperature-dependent conductance oscillation measurement.

In the case of using single dot with 30 nm × 80 nm × 125 nm dimension, coulomb blockade effect could be reduced by applying gate voltage higher than 3V and setting drain resistance higher than source's.

Our studies show an alternative approach in modeling and simulation of electronic devices and could be potential for development of novel nanoelectronic devices.

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